Jian-Qing WANG, Zong-Quan GU, Ming-Fu LI, Wu-Yan LAI
理论物理通讯. 1993, 20(2): 159-170.
Intervalley Γ- X deformation potential constants (IVDP's) have been calculated by first principle pseudopotential method for the Ⅲ-V zincblende semiconductors Alp, AlAs, AlSb, Gap, GaAs, GaSb, InP, ZnAs and ZnSb. As a pro to type crystal we have also carried out calculations on Si. When comparing the calculated IVDP's of LA phonon for Gap, InP and InAs and LO phonon for AlAs, AlSb, GaAs, GaSb and InSb with a previous calculation by EPM in rigid approximation, good agreements are found. However, our ab initio pseudopotential results of LA phonon for AlAs, AlSb, GaAs, GaSb and InSb and LO phonon for Gap, InP and ZnAs are about one order of magnitude smaller than those obtained by EPM calculations, which indicate that the electron redistributions upon the phonon deformations may be important in affecting Γ- X intervalley shatteri'ngs for these phonon modes when the anions are being displaced. In our calculations the phonon modes of LA and LO at X point have been evaluated in frozen phonon approximation. We have obtained, at the same time, the LAX and LOX phonon frequencies for these materials from total energy calculations. The calculated phonon frequencies agree very well with experimental values for these semiconductors.