CAO Juncheng, LEI Xiaolin
理论物理通讯. 1998, 30(3): 381-386.
On the basis of the Lei-Ting balance-equation transport theory recently developed for nonparabolic energy band, we propose a hydrodynamic approach to the spatially inhomogeneous electron transport in semiconductor devices. In the present approach, the momentum and energy collision terms are expressed by two nonlinear functions, the frictional acceleration ancl energy-loss rate, which give a detailed scattering-process-level description of nonstationary ancl nonlocal charge transport in the system. This approach allows one to calculate selfconsistently the transport parameters within the model itself based on the primary material data (band structure, cleformation potential constant, etc.), thus it minimizes the uncertainty associated with the use of some empirical relations for transport coefficients. As a demonstration of the approach, we have carried out a numerical calculation for a submicrometer Sin+nn+ diode by assuming an isotropic Kane-type energy band. The results for electron velocity and energy, obtained at much less computing cost than the Monte-Carlo (MC) method, are in good agreement with h1C prediction. The influence of heat-flow- term on electron transport behaviour, especially on velocity overshoot, is also investigated.
