The vacancy defects and oxygen atoms occupation effects on mechanical and electronic properties of Mo5Si3 silicides

The vacancy defects and oxygen atoms occupation effects on mechanical and electronic properties of Mo₅Si₃ silicides

Jiaying Chen, Xudong Zhang, Linmei Yang, Feng Wang

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Communications in Theoretical Physics ›› 2021, Vol. 73 ›› Issue (4) : 45702. DOI: 10.1088/1572-9494/abe367

The vacancy defects and oxygen atoms occupation effects on mechanical and electronic properties of Mo₅Si₃ silicides

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2021, 73(4): 45702 https://doi.org/10.1088/1572-9494/abe367

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Received	Revised	Accepted	Published
2020-12-09	2021-02-05	2021-02-05	2021-04-01
Issue Date
2021-04-12