Binding Energies of the Electron in GaAs-Gal-xAlxAs Quantum Well Under Perpendicular Magnetic Field

Zhongjun SHEN, Shu-an ZHANG, Shiwei GU

Communications in Theoretical Physics ›› 1991, Vol. 16 ›› Issue (2) : 233-236.

PDF(159 KB)
Welcome to visit Communications in Theoretical Physics,
PDF(159 KB)
Communications in Theoretical Physics ›› 1991, Vol. 16 ›› Issue (2) : 233-236.
General

Binding Energies of the Electron in GaAs-Gal-xAlxAs Quantum Well Under Perpendicular Magnetic Field

    {{javascript:window.custom_author_en_index=0;}}
  • {{article.zuoZhe_EN}}
Author information +
History +

HeighLight

{{article.keyPoints_en}}

Abstract

{{article.zhaiyao_en}}

Key words

QR code of this article

Cite this article

EndNote

Ris (Procite)

Bibtex

Download Citations
{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 1991, 16(2): 233-236

References

List( Publishing order | Descend order by publishing year | Descend order by cited within ) Chart analysis

References

{{article.reference}}

Funding

RIGHTS & PERMISSIONS

{{article.copyrightStatement_en}}
{{article.copyrightLicense_en}}
PDF(159 KB)

Accesses

Citation

Detail
Sections
Recommended
Copyright © Editorial Office of Communications in Theoretical Physics
Address: Institute of Theoretical Physics, Chinese Academy of Sciences,
Beijing 100190, China　
E-mail：ctp@itp.ac.cn
Website: https://ctp.itp.ac.cn　https://iopscience.org/ctp
Powered by Beijing Magtech Co., Ltd.

/

〈 〉