Indications of c-axis Charge Transport in Hole Doped Triangular Antiferromagnets

LIANG Ying, LIU Bin, and FENG Shi-Ping,,

Communications in Theoretical Physics ›› 2004, Vol. 41 ›› Issue (04) : 614-618.

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Communications in Theoretical Physics ›› 2004, Vol. 41 ›› Issue (04) : 614-618.

Indications of c-axis Charge Transport in Hole Doped Triangular Antiferromagnets

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Abstract

The c-axis charge transport of the hole doped triangular antiferromagnet is investigated within the t-J model by considering the incoherent interlayer hopping. It is shown that the c-axis charge transport of the hole doped triangular antiferromagnet is essentially determined by the scattering from the in-plane fluctuation. The c-axis conductivity spectrum shows a low-energy peak and the unusual high-energy broad band, while the c-axis resistivity is characterized by a crossover from the high temperature metallic-like behavior to the low temperature insulating-like behavior, which is qualitatively consistent with those of the hole doped square lattice antiferromagnet.

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c-axis charge transport / triangular lattice / t-J model

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LIANG Ying, LIU Bin, FENG Shi-Ping. Indications of c-axis Charge Transport in Hole Doped Triangular Antiferromagnets[J]. Communications in Theoretical Physics, 2004, 41(04): 614-618
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