Effects of Unintended Dopants on I-V Characteristics of the Double-Gate MOSFETs, a Simulation Study

LI Pei-Cheng, MEI Guang-Hui, HU Guang-Xi, WANG Ling-Li, LIU Ran, TANG Ting-Ao

Communications in Theoretical Physics ›› 2012, Vol. 58 ›› Issue (01) : 171-174.

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Communications in Theoretical Physics ›› 2012, Vol. 58 ›› Issue (01) : 171-174.
Interdisciplinary Physics and Related Areas of Science and Technology

Effects of Unintended Dopants on I-V Characteristics of the Double-Gate MOSFETs, a Simulation Study

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2012, 58(01): 171-174

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