Effect of Zn doping on electronic structure and optical properties zincblende GaN (A DFT + U insight)
Muhammad Junaid Iqbal Khan,Zarfishan Kanwal,Masood Yousaf,Hamid Ullah,Javed Ahmad,Abid Latif,Yong-Han Shin,Ata Ur Rahman Khalid
Figure 4. PDOS of (a) pure GaN, and with Zn doping concentrations of (b) 6.25%, (c) 12.50%, (d) 18.70% with implication of U = 0, 2, 4, 6 eV. The vertical dotted lines represent the Fermi level.