The vacancy defects and oxygen atoms occupation effects on mechanical and electronic properties of Mo5Si3 silicides
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The vacancy defects and oxygen atoms occupation effects on mechanical and electronic properties of Mo5Si3 silicides |
| Jiaying Chen,Xudong Zhang,Linmei Yang,Feng Wang |
| Figure 2. The phonon dispersion curves along the high-symmetry direction in the Brillouin zone for (a) perfect Mo5Si3, (b) Mo–Va1, (c) Mo–Va2, (d) Si–Va1, (e) Si–Va2, (f) O–Mo1, (g) O–Mo2, (h) O–Si1, (i) O–Si2, respectively. |
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