The vacancy defects and oxygen atoms occupation effects on mechanical and electronic properties of Mo5Si3 silicides
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The vacancy defects and oxygen atoms occupation effects on mechanical and electronic properties of Mo5Si3 silicides |
| Jiaying Chen,Xudong Zhang,Linmei Yang,Feng Wang |
| Figure 3. Calculated B/G ratio of Mo5Si3 with different vacancies and O-occupied Mo5Si3. |
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