The vacancy defects and oxygen atoms occupation effects on mechanical and electronic properties of Mo5Si3 silicides
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The vacancy defects and oxygen atoms occupation effects on mechanical and electronic properties of Mo5Si3 silicides |
| Jiaying Chen,Xudong Zhang,Linmei Yang,Feng Wang |
| Figure 4. The total and partial density of states (DOS) of Mo5Si3 with different vacancies and four different oxygen occupancy models, (a) Mo5Si3, (b) Mo–Va1, (c) Mo–Va2, (d) Si–Va1, (e) Si–Va2, (f) O–Mo1, (g) O–Mo2, (h) O–Si1, (i) O–Si2, respectively. |
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