Effects of Unintended Dopants on I-V Characteristics of the Double-Gate MOSFETs, a Simulation Study
李佩成, 梅光辉, 胡光喜, 王伶俐, 刘冉, 汤庭鳌
Effects of Unintended Dopants on I-V Characteristics of the Double-Gate MOSFETs, a Simulation Study
LI Pei-Cheng, MEI Guang-Hui, HU Guang-Xi, WANG Ling-Li, LIU Ran, TANG Ting-Ao
理论物理通讯
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2012, (01): 171
-174
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